The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Sep. 08, 2014
Avogy, Inc., San Jose, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
David P. Bour, Cupertino, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Linda Romano, Sunnyvale, CA (US);
Madhan Raj, Cupertino, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A Schottky diode and method of fabricating the Schottky diode using gallium nitride (GaN) materials is disclosed. The method includes providing an n-type GaN substrate having first and second opposing surfaces. The method also includes forming an ohmic metal contact electrically coupled to the first surface, forming an n-type GaN epitaxial layer coupled to the second surface, and forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer. The AlGaN surface layer has a thickness which is less than a critical thickness, and the critical thickness is determined based on an aluminum mole fraction of the AlGaN surface layer. The method also includes forming a Schottky contact electrically coupled to the n-type AlGaN surface layer, where, during operation, an interface between the n-type GaN epitaxial layer and the n-type AlGaN surface layer is substantially free from a two-dimensional electron gas.