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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Linda T Romano

This inventor holds 120 USPTO granted patents and 20 published patent applications and 9 EPO patents, primarily in Gallium Nitride Devices (CPC class H01L29-2003). Top assignees: Avogy, Inc., Xerox Corporation, Nanosys, Inc.. Active years: 1998-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Linda T Romano. Retrieved from https://idiyas.com/inventor/linda-t-romano

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 120 

% Patents Active = 89.2

 

Average Co-Inventor Count = 4.6

ph-index = 27

Forward Citations = 2,949(Granted Patents)

Forward Citations (Not Self Cited) = 2,859(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Sunnyvalle, CA (US) (2014)
  • Sunnyvale, CA (US) (1998 - 2019)

Company Filing History:

goldMedal36 out of 76 
 
Avogy, Inc.
 patents
silverMedal35 out of 24,261 
 
Xerox Corporation
 patents
bronzeMedal31 out of 238 
 
Nanosys, Inc.
 patents
4. 11 out of 84 
 
Glo Ab
 patents
5. 4 out of 222 
 
Philips Lumileds Lighting Company LLC
 patents
6. 2 out of 910 
 
Lumileds LLC
 patents
7. 1 out of 1 
 
Agovy, Inc.
 patent
8. 1 out of 21,910 
 
Koninklijke Philips Corporation N.v.
 patents
where one patent can have more than one assignee

Years Active: 1998-2019

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Areas of Expertise:
Gallium Nitride
Nanowire LED
Schottky Diode
Doping Control
Power Devices
Vertical JFET
Defect Density
P-N Junctions
Surface Active Region
Textured Surface
Ion Implantation
Coalesced Structures
120 patents (USPTO):Explore Patents
1. 10312404 - Semiconductor light emitting device growing active layer on textured surface (2019-06-04),
2. 10205054 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2019-02-12),
3. 10026866 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2018-07-17),
4. 9911896 - Semiconductor light emitting device growing active layer on textured surface (2018-03-06),
5. 9882086 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2018-01-30),
6. 9761757 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2017-09-12),
7. 9570651 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same (2017-02-14),
8. 9508838 - InGaN ohmic source contacts for vertical power devices (2016-11-29),
9. 9502544 - Method and system for planar regrowth in GaN electronic devices (2016-11-22),
10. 9450112 - GaN-based Schottky barrier diode with algan surface layer (2016-09-20),
11. 9412899 - Method of stress induced cleaving of semiconductor devices (2016-08-09),
12. 9330918 - Edge termination by ion implantation in gallium nitride (2016-05-03),
13. 9324844 - Method and system for a GaN vertical JFET utilizing a regrown channel (2016-04-26),
14. 9318331 - Method and system for diffusion and implantation in gallium nitride based devices (2016-04-19),
15. 9287468 - LED submount with integrated interconnects (2016-03-15),

Title: Trailblazing Inventor Linda T Romano: Pioneering Innovation in Sunnyvale, CA

Introduction:

Linda T Romano is a visionary inventor based in Sunnyvale, CA, whose passion for innovation and relentless drive to create have solidified her reputation as a trailblazer in the world of inventions. With an impressive 120 patents to her name, Romano continues to push the boundaries of technology and inspire others in the field of innovation.

Latest Patents:

Romano's latest patents showcase her expertise in semiconductor technology:

1. "Semiconductor light emitting device growing active layer on textured surface": This patent focuses on providing strain relief in III-nitride light emitting devices by configuring the surface on which the device grows. The strain-relieved layer enhances the performance of the light emitting device.

2. "III-nitride nanowire LED with strain modified surface active region and method of making thereof": This patent introduces a core-shell nanowire device with an innovative eave region that enhances efficiency through higher indium content.

Career Highlights:

Throughout her career, Linda T Romano has made significant contributions to the field of technology. She has worked with industry leaders such as Avogy, Inc. and Xerox Corporation, where she honed her skills and expertise in semiconductor devices. Romano's dedication to innovation and problem-solving sets her apart as a leader in her field.

Collaborations:

Romano has collaborated with esteemed professionals in the industry, including David P Bour and Isik C Kizilyalli. Their combined expertise and shared commitment to technological advancement have led to groundbreaking inventions and advancements in semiconductor technology.

Conclusion:

In conclusion, Linda T Romano's remarkable career as an inventor showcases her unwavering dedication to innovation and her pioneering spirit in the world of inventions. Through her groundbreaking patents and collaborative efforts, Romano continues to shape the future of technology and inspire others to push the boundaries of what is possible in the field of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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