Cupertino, CA, United States of America

David P Bour

This inventor holds 151 USPTO granted patents and 29 published patent applications and 6 EPO patents, primarily in Gallium Nitride Electronics (CPC class H01L29-2003). Top assignees: Xerox Corporation, Avogy, Inc., Applied Materials, Inc.. Active years: 1995-2022.

USPTO Granted Patents = 151 

% Patents Active = 72.2

 

Average Co-Inventor Count = 3.7

ph-index = 22

Forward Citations = 1,837(Granted Patents)

Forward Citations (Not Self Cited) = 1,776(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Spring Court Cupertino, CA (US) (1995)
  • Cupertino, CA (US) (1995 - 2022)

Company Filing History:

goldMedal43 out of 24,253 
 
Xerox Corporation
 patents
silverMedal38 out of 76 
 
Avogy, Inc.
 patents
bronzeMedal13 out of 14,391 
 
Applied Materials, Inc.
 patents
411 out of 4,728 
 
Agilent Technologies, Inc.
 patents
59 out of 2,079 
 
Palo Alto Research Center Inc.
 patents
68 out of 43,321 
 
Apple Inc.
 patents
78 out of 497 
 
Avago Technologies Ecbu IP (Singapore) Pte. Ltd.
 patents
86 out of 258 
 
Avago Technologies Fiber IP (Singapore) Pte. Ltd
 patents
93 out of 1,813 
 
Avago Technologies General IP (Singapore) Pte. Ltd.
 patents
102 out of 84 
 
Alta Devices, Inc.
 patents
111 out of 1 
 
Agovy, Inc.
 patent
121 out of 24 
 
Avago Technologies Fiber IP Pte Ltd.
 patents
131 out of 55 
 
Avago Technologies General IP Pte, Ltd.
 patents
141 out of 133 
 
Lumileds Lighting U.s., LLC
 patents
151 out of 20 
 
Nexgen Power Systems, Inc.
 patents
161 out of 222 
 
Philips Lumileds Lighting Company LLC
 patents
171 out of 197 
 
Sdl Inc.
 patents
181 out of 27 
 
Utica Leaseco, LLC
 patents
193 out of 834,307 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2022

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Areas of Expertise:
Gallium Nitride
LED Structures
High Growth Rate
P-N Junctions
Schottky Diode
Vertical JFET
Doping Control
In-Situ Etch
Device Yield
Defect Density
Aluminum Gallium Nitride
Regrowth
151 patents (USPTO):Explore Patents

Title: David P Bour: Innovating the Future with High-Growth Rate Deposition Methods

Introduction:

David P Bour, a seasoned inventor based in Cupertino, CA, has made significant contributions to the field of epitaxial growth, particularly in the development of high-growth rate deposition methods for various applications such as solar energy and semiconductor devices. With a remarkable portfolio of 150 patents, Bour has established himself as a leading figure in the industry. This article explores some of his latest patents, career highlights, and notable collaborations.

Latest Patents:

Bour's recent patents demonstrate his expertise in high growth rate deposition for forming different cells on a wafer. Specifically, his inventions focus on epitaxial growth processes of Group III/V materials at impressive rates, ranging from 30 µm/hr to over 120 µm/hr. The Group III/V materials, including gallium arsenide, gallium aluminum arsenide, and gallium indium arsenide, find applications in a wide array of industries, including solar energy and semiconductor devices. These thin films of epitaxially grown layers hold great promise for improving the performance and efficiency of electronic devices.

Career Highlights:

Throughout his career, Bour has worked with renowned companies such as Xerox Corporation and Avogy, Inc. Under Xerox Corporation, Bour played an instrumental role in advancing the field of high growth rate deposition methods, enabling the development of cutting-edge semiconductor technologies. His expertise in epitaxial growth and his innovative approach to solving complex challenges have positioned him as a key contributor to the industry.

Collaborations:

In his journey of innovation, Bour has had the privilege of collaborating with esteemed colleagues, including Linda T Romano and Isik C Kizilyalli. These partnerships have not only elevated the quality of his work but have also fostered knowledge sharing and cross-pollination of ideas. Such collaborations serve as a testimony to Bour's commitment to advancing the field through teamwork and collective expertise.

Conclusion:

David P Bour's contributions to the field of high growth rate deposition methods have reshaped the possibilities in the solar energy and semiconductor industries. His 150 patents, especially those related to Group III/V materials, exemplify his inventive mindset and dedication to pushing the boundaries of what is possible. Collaborations with industry leaders and his work at esteemed companies have solidified Bour's reputation as an innovator, paving the way for advancements in electronic devices and renewable energy solutions. As we move toward a more sustainable and technologically advanced future, inventors like David P Bour play a vital role in driving progress and impacting the lives of many.

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