For the Inventor, By the Inventor

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Santa Clara, CA, United States of America

Nexgen Power Systems, Inc.

USPTO Granted Patents = 20

Trademarks = 1

Forward Citations = 18

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19 inventors (with patents filed for the assignee):

Clifford Drowley (11 out of 30 patents)

Andrew P Edwards (9 out of 26 patents)

Subhash Srinivas Pidaparthi (9 out of 26 patents)

4. Ray Milano (7 out of 11 patents)

5. Hao Cui (4 out of 10 patents)

6. Thomas R Prunty (4 out of 40 patents)

7. Gangfeng Ye (3 out of 8 patents)

8. Isik C Kizilyalli (3 out of 82 patents)

9. Anders Lind (3 out of 16 patents)

10. Dave P Bour (3 out of 10 patents)

11. Shahin Sharifzadeh (3 out of 16 patents)

12. Robert Routh (2 out of 3 patents)

13. David P Bour (1 out of 151 patents)

14. Hui Nie (1 out of 67 patents)

15. Madhan M Raj (1 out of 10 patents)

20 patents: Sort by Forward Citations

1. 11948801 - Method and system for etch depth control in III-V semiconductor devices (2024-04-02),

2. 11935838 - Method and system for fabricating fiducials using selective area growth (2024-03-19),

3. 11929440 - Fabrication method for JFET with implant isolation (2024-03-12),

4. 11916134 - Regrowth uniformity in GaN vertical devices (2024-02-27),

5. 11881766 - Method and system for controlling the power factor of a power converter (2024-01-23),

6. 11837951 - Self-oscillating high frequency converter with power factor correction (2023-12-05),

7. 11824430 - Method and apparatus for sensing the input voltage of a power converter (2023-11-21),

8. 11824086 - Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices (2023-11-21),

9. 11770075 - Method and apparatus for digital, closed-loop control of CrCM switch-mode power converters (2023-09-26),

10. 11735671 - Method and system for fabrication of a vertical fin-based field effect transistor (2023-08-22),

11. 11728415 - Method for regrown source contacts for vertical gallium nitride based FETS (2023-08-15),

12. 11637209 - JFET with implant isolation (2023-04-25),

13. 11575000 - Super-junction based vertical gallium nitride JFET power devices (2023-02-07),

14. 11335810 - Method and system for fabrication of a vertical fin-based field effect transistor (2022-05-17),

15. 11315884 - Method and system for fabricating fiducials using selective area growth (2022-04-26),

Nexgen Power Systems, Inc. is a technology company based in Santa Clara, California, specializing in advanced power electronics solutions. The organization focuses on the development and manufacturing of high-efficiency power systems that leverage innovative semiconductor technologies. By integrating cutting-edge materials and designs, Nexgen aims to enhance energy efficiency across various applications, including renewable energy, electric vehicles, and industrial systems, contributing to a sustainable energy future.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

20 Patents

#167 in Santa Clara, CA

#3,933 in California

#16,382 in US

#31,233 in the World

Santa Clara, CA, United States of America

Nexgen Power Systems, Inc.

Forward Citations = 18

19 inventors:

Clifford Drowley (11 out of 30 patents)

Andrew P Edwards (9 out of 26 patents)

Subhash Srinivas Pidaparthi (9 out of 26 patents)

4. Ray Milano (7 out of 11 patents)

5. Hao Cui (4 out of 10 patents)

Please report any incorrect information to [email protected]

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