For the Inventor, By the Inventor

Enter assignee name

Santa Clara, CA, United States of America

Nexgen Power Systems, Inc.

USPTO Granted Patents = 20

Trademarks = 1

Forward Citations = 13

Loading Chart...

Loading Chart...

19 inventors (with patents filed for the assignee):

Clifford Drowley (11 out of 24 patents)

Andrew P Edwards (9 out of 21 patents)

Subhash Srinivas Pidaparthi (9 out of 21 patents)

4. Ray Milano (7 out of 10 patents)

5. Hao Cui (4 out of 10 patents)

6. Thomas R Prunty (4 out of 40 patents)

7. Shahin Sharifzadeh (3 out of 6 patents)

8. Gangfeng Ye (3 out of 8 patents)

9. Isik C Kizilyalli (3 out of 82 patents)

10. Anders Lind (3 out of 14 patents)

11. Dave P Bour (3 out of 10 patents)

12. Robert Routh (2 out of 3 patents)

13. David P Bour (1 out of 151 patents)

14. Hui Nie (1 out of 67 patents)

15. Madhan M Raj (1 out of 10 patents)

20 patents: Sort by Forward Citations

1. 11948801 - Method and system for etch depth control in III-V semiconductor devices (2024-04-02),

2. 11935838 - Method and system for fabricating fiducials using selective area growth (2024-03-19),

3. 11929440 - Fabrication method for JFET with implant isolation (2024-03-12),

4. 11916134 - Regrowth uniformity in GaN vertical devices (2024-02-27),

5. 11881766 - Method and system for controlling the power factor of a power converter (2024-01-23),

6. 11837951 - Self-oscillating high frequency converter with power factor correction (2023-12-05),

7. 11824430 - Method and apparatus for sensing the input voltage of a power converter (2023-11-21),

8. 11824086 - Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices (2023-11-21),

9. 11770075 - Method and apparatus for digital, closed-loop control of CrCM switch-mode power converters (2023-09-26),

10. 11735671 - Method and system for fabrication of a vertical fin-based field effect transistor (2023-08-22),

11. 11728415 - Method for regrown source contacts for vertical gallium nitride based FETS (2023-08-15),

12. 11637209 - JFET with implant isolation (2023-04-25),

13. 11575000 - Super-junction based vertical gallium nitride JFET power devices (2023-02-07),

14. 11335810 - Method and system for fabrication of a vertical fin-based field effect transistor (2022-05-17),

15. 11315884 - Method and system for fabricating fiducials using selective area growth (2022-04-26),

Nexgen Power Systems, Inc. is a leading provider of innovative energy solutions for commercial and industrial clients. With a focus on sustainable power generation and storage technologies, we help businesses reduce their carbon footprint and lower their energy costs. Our team of experts are dedicated to providing customized energy solutions to meet the unique needs of each client, ensuring maximum efficiency and cost savings. Visit our website to learn more about our products and services.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

20 Patents

#206 in Santa Clara, CA

#3,810 in California

#15,886 in US

#30,350 in the World

Santa Clara, CA, United States of America

Nexgen Power Systems, Inc.

Forward Citations = 13

19 inventors:

Clifford Drowley (11 out of 24 patents)

Andrew P Edwards (9 out of 21 patents)

Subhash Srinivas Pidaparthi (9 out of 21 patents)

4. Ray Milano (7 out of 10 patents)

5. Hao Cui (4 out of 10 patents)

Please report any incorrect information to support@idiyas.com

Loading…