The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Mar. 24, 2021
Applicant:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Inventors:

Clifford Drowley, Santa Clara, CA (US);

Andrew P. Edwards, Santa Clara, CA (US);

Subhash Srinivas Pidaparthi, Santa Clara, CA (US);

Shahin Sharifzadeh, Santa Clara, CA (US);

Assignee:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/0847 (2013.01); H01L 29/2003 (2013.01); H01L 29/66522 (2013.01); H01L 29/785 (2013.01);
Abstract

A method of forming an alignment contact includes: providing a III-nitride substrate; epitaxially growing a first III-nitride layer on the III-nitride substrate, wherein the first III-nitride layer is characterized by a first conductivity type; forming a plurality of III-nitride fins on the first III-nitride layer, wherein each the plurality of III-nitride fins is separated by one of a plurality of first recess regions, wherein the plurality of III-nitride fins are characterized by the first conductivity type; epitaxially regrowing a III-nitride source contact portion on each of the plurality of III-nitride fins; and forming a source contact structure on the III-nitride source contact portions.


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