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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11929440 B1

PDFFull Text
Date of Patent:
Mar. 12, 2024

Filed:

Mar. 09, 2023

Fabrication method for jfet with implant isolation

Applicant:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Inventors:

Clifford Drowley, Santa Clara, CA (US);

Andrew P. Edwards, Santa Clara, CA (US);

Subhash Srinivas Pidaparthi, Santa Clara, CA (US);

Ray Milano, Santa Clara, CA (US);

Assignee:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 27/0676 (2013.01); H01L 27/0886 (2013.01); H01L 29/0642 (2013.01); H01L 29/2003 (2013.01); H01L 29/66909 (2013.01); H01L 29/785 (2013.01);
Abstract

Methods and semiconductor devices are provided. A vertical junction field effect transistor (JFET) includes a substrate, an active region having a plurality of semiconductor fins, a source metal layer on an upper surface of the fins, a source metal pad layer coupled to the semiconductor fins through the source metal layer, a gate region surrounding the semiconductor fins, and a body diode surrounding the gate region.

Find Patent Forward Citations

Drowley, Clifford. (2024). Fabrication method for jfet with implant isolation (U.S. Patent No. 11929440). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11929440

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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