The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Dec. 28, 2020
Applicant:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Inventors:

Clifford Drowley, Santa Clara, CA (US);

Ray Milano, Santa Clara, CA (US);

Subhash Srinivas Pidaparthi, Santa Clara, CA (US);

Andrew P. Edwards, Santa Clara, CA (US);

Assignee:

NEXGEN POWER SYSTEMS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/808 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66924 (2013.01); H01L 21/0254 (2013.01); H01L 21/02639 (2013.01); H01L 21/308 (2013.01); H01L 21/30612 (2013.01); H01L 29/2003 (2013.01); H01L 29/66909 (2013.01); H01L 29/8083 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first conductivity type, a drift layer of the first conductivity type coupled to the semiconductor substrate, a fin array having a first row of fins and a second row of fins on the drift layer, and a space between the first row of fins and the second row of fins. The first row of fins includes a plurality of first elongated fins arranged in parallel to each other along a first row direction and separated by a first distance, and the second row of fins includes a plurality of second elongated fins arranged in parallel to each other along a second row direction and separated by a second distance.


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