Xerox Corporation

Avogy, Inc.

Applied Materials, Inc.

Agilent Technologies, Inc.

Palo Alto Research Center Inc.

Apple Inc.

Avago Technologies Ecbu IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP (singapore) Pte. Ltd

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Avago Technologies General IP (singapore) Pte. Ltd.

Alta Devices, Inc.

Philips Lumileds Lighting Company LLC

Sdl Inc.

Lumileds Lighting U.s., LLC

Avago Technologies General IP Pte, Ltd.

David P Bour

Linda T Romano

Isik C Kizilyalli

Hui Nie

Thomas R Prunty

Andrew Paul Edwards

Richard J Brown

Michael A Kneissl

Scott W Corzine

Thomas L Paoli

Michael R T Tan

Christopher L Chua

Noble Marshall Johnson

Lori D Washington

Dmitry S Sizov

Jacob W Smith

Tetsuya Takeuchi

Sandeep Nijhawan

Daniel Arthur Haeger

Madhan M Raj

Ying-Lan Chang

Christian G Van De Walle

Robert L Thornton

Arpan Chakraborty

Kelly C McGroddy

Ross D Bringans

Jean-Jacques P Drolet

James Michael Perkins

Ashish Tandon

Jeffrey N Miller

Jack A Walker

David W Treat

Kevin J Beernink

Mahdan Raj

Ping Mei

Werner K Goetz

Zhihong Yang

Virginia Robbins

Michael H Leary

Steven D Lester

David J Eaglesham

Alexander Tam

Clifford F Knollenberg

Donald Ray Disney

Hua Chung

Hiroji Hanawa

Gang He

Nathan Fredrick Gardner

Wei-Yung Hsu

Alain Duboust

Gregg Higashi

Ghulam Hasnain

Anzhong Chang

David H Quach

Donald J K Olgado

Stephen Andrew Stockman

G A Connell

Sumedh Acharya

Jie Su

Mark R Hueschen

Alexey Goder

Christopher P Kocot

Xiaobin Xin

Sang Won Kang

Brian Joel Alvarez

Clarence John Dunnrowicz

Fernando A Ponce

Kyawwin Jason Maung

Chaokun Lin

Chris G Van De Walle

Xizi Dong

Michael Renne Ty Tan

Donald R Scifres

Michael R Tan

Jeng Ping Lu

Decai Sun

Gregory J Kovacs

Nyi O Myo

Brent Shawhan Krusor

William Richard Trutna

Danielle Russell Chamberlin

Quentin Diduck

Ronald R Stevens

Danny E Mars

Garry K Kwong

Gangfeng Ye

Jintian Zhu

Steve Lester

Daniel Hofstetter

Ying-Ian Chang

Norbert H Nickel

Yoon-Kyu Song

Andy Luan

Rosemary Twist

Sandeep Nijhawa

William H Perez

Bill Perez

Ga Neville Connell

Steve Park

Dimitry S Sizov

Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 &#x3bc;m/hr or greater, for example, about 40 &#x3bc;m/hr, about 50 &#x3bc;m/hr, about 55 &#x3bc;m/hr, about 60 &#x3bc;m/hr, about 70 &#x3bc;m/hr, about 80 &#x3bc;m/hr, and about 90-120 &#x3bc;m/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Methods for high growth rate deposition for forming different cells on a wafer

LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.

LED sidewall processing to mitigate non-radiative recombination

Light emitting diodes are described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.

Light emitting diode with displaced P-type doping

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

LED structures for reduced non-radiative sidewall recombination

Light emitting diodes re described. In an embodiment, an LED includes a graded p-side spacer layer on a p-type confinement layer, and the graded p-side spacer layer graded from an initial band gap adjacent the p-type confinement layer to a lower band gap. For example, the graded band gap may be achieved by a graded Aluminum concentration.

A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.

Method and system for in-situ etch and regrowth in gallium nitride based devices

Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Transfer chamber metrology for improved device yield

Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 &#x3bc;m/hr or greater, for example, about 40 &#x3bc;m/hr, about 50 &#x3bc;m/hr, about 55 &#x3bc;m/hr, about 60 &#x3bc;m/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.

Method of high growth rate deposition for group III/V materials

A vertical JFET includes a III-nitride substrate and a III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The first III-nitride epitaxial layer has a first dopant concentration. The vertical JFET also includes a III-nitride epitaxial structure coupled to the first III-nitride epitaxial layer. The III-nitride epitaxial structure includes a set of channels of the first conductivity type and having a second dopant concentration, a set of sources of the first conductivity type, having a third dopant concentration greater than the first dopant concentration, and each characterized by a contact surface, and a set of regrown gates interspersed between the set of channels. An upper surface of the set of regrown gates is substantially coplanar with the contact surfaces of the set of sources.

Method and system for planar regrowth in GaN electronic devices

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David P Bour