For the Inventor, By the Inventor

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San Jose, CA, United States of America

Avogy, Inc.

USPTO Granted Patents = 76

Forward Citations = 175

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26 inventors (with patents filed for the assignee):

Isik C Kizilyalli (58 out of 82 patents)

Hui Nie (56 out of 67 patents)

Andrew Paul Edwards (44 out of 46 patents)

4. Richard J Brown (43 out of 44 patents)

5. David P Bour (38 out of 151 patents)

6. Linda T Romano (36 out of 120 patents)

7. Thomas R Prunty (35 out of 40 patents)

8. Donald Ray Disney (28 out of 169 patents)

9. Madhan M Raj (9 out of 10 patents)

10. Dave P Bour (6 out of 10 patents)

11. Hemal N Shah (6 out of 7 patents)

12. Brian Joel Alvarez (5 out of 6 patents)

13. Mahdan Raj (5 out of 5 patents)

14. Ozgur Aktas (3 out of 30 patents)

15. Quentin Diduck (3 out of 16 patents)

Core Competencies:

AC-DC Converter

Gallium Nitride

Schottky Diode

Vertical JFET

Power Devices

Merged P-I-N Schottky

Doping Control

Defect Density

High Power Electronics

Planar Regrowth

Ohmic Contacts

Superjunction Device Structures

76 patents: Sort by Forward Citations

1. 9531256 - AC-DC converter with adjustable output (2016-12-27),

2. 9525039 - Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer (2016-12-20),

3. 9508838 - InGaN ohmic source contacts for vertical power devices (2016-11-29),

4. 9502544 - Method and system for planar regrowth in GaN electronic devices (2016-11-22),

5. 9484470 - Method of fabricating a GaN P-i-N diode using implantation (2016-11-01),

6. 9472684 - Lateral GaN JFET with vertical drift region (2016-10-18),

7. 9450112 - GaN-based Schottky barrier diode with algan surface layer (2016-09-20),

8. D762573 - Power supply (2016-08-02),

9. 9397186 - Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back (2016-07-19),

10. 9391179 - Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitance (2016-07-12),

11. 9369059 - AC-DC converter for wide range output voltage and high switching frequency (2016-06-14),

12. 9368582 - High power gallium nitride electronics using miscut substrates (2016-06-14),

13. 9330918 - Edge termination by ion implantation in gallium nitride (2016-05-03),

14. 9324844 - Method and system for a GaN vertical JFET utilizing a regrown channel (2016-04-26),

15. 9324809 - Method and system for interleaved boost converter with co-packaged gallium nitride power devices (2016-04-26),

Avogy, Inc. is a high-tech company specializing in advanced power management and energy conversion solutions. They design and develop innovative semiconductor technologies and power electronic systems for various industries, such as consumer electronics, automotive, aerospace, and industrial. With their expertise, Avogy strives to deliver efficient, reliable, and sustainable power solutions to enable the next generation of electronic devices and applications.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 23 2025

76 Patents

#128 in San Jose, CA

#1,110 in California

#4,646 in US

#9,501 in the World

San Jose, CA, United States of America

Avogy, Inc.

Forward Citations = 175

26 inventors:

Isik C Kizilyalli (58 out of 82 patents)

Hui Nie (56 out of 67 patents)

Andrew Paul Edwards (44 out of 46 patents)

4. Richard J Brown (43 out of 44 patents)

5. David P Bour (38 out of 151 patents)

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