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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9368582 B1

PDFFull Text
Date of Patent:
Jun. 14, 2016

Filed:

Nov. 04, 2013

High power gallium nitride electronics using miscut substrates

Applicant:

Avogy, Inc., San Jose, CA (US);

Inventors:

Isik C. Kizilyalli, San Francisco, CA (US);

David P. Bour, Cupertino, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

Gangfeng Ye, Fremont, CA (US);

Assignee:

Avogy, Inc., San Jose, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

David Vu

Assistant Examiner:

Jonathan Han

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/7605 (2013.01); H01L 29/045 (2013.01); H01L 29/6609 (2013.01); H01L 29/66204 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/0649 (2013.01);
Abstract

An electronic device includes a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction of between 0.15° and 0.65°. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxial layer.

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