The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Dec. 02, 2014
Applicant:
Avogy, Inc., San Jose, CA (US);
Inventors:
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Andrew P. Edwards, San Jose, CA (US);
Linda Romano, Sunnyvale, CA (US);
David P. Bour, Cupertino, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Thomas R. Prunty, Santa Clara, CA (US);
Assignee:
Avogy, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/808 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2654 (2013.01); H01L 29/0619 (2013.01); H01L 29/0642 (2013.01); H01L 29/2003 (2013.01); H01L 29/6631 (2013.01); H01L 29/66143 (2013.01); H01L 29/66446 (2013.01); H01L 29/66856 (2013.01); H01L 29/8083 (2013.01); H01L 29/868 (2013.01); H01L 29/872 (2013.01);
Abstract
A method of making an edge terminated semiconductor device includes providing a GaN substrate having a GaN epitaxial layer grown thereon and exposing a portion of the GaN epitaxial layer to ion implantation. The energy dose is selected to provide a resistivity that is at least 90% of maximum achievable resistivity. The method also includes depositing a conductive layer over a portion of the implanted region.