The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Jul. 21, 2017
Applicant:
Utica Leaseco, Llc, Rochester Hills, MI (US);
Inventors:
Hui Nie, Cupertino, CA (US);
Brendan M. Kayes, Los Gatos, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Assignee:
UTICA LEASECO, LLC, Rochester Hills, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 27/142 (2014.01); H01L 31/0735 (2012.01); H01L 31/0443 (2014.01);
U.S. Cl.
CPC ...
H01L 31/03046 (2013.01); H01L 27/142 (2013.01); H01L 31/0304 (2013.01); H01L 31/0443 (2014.12); H01L 31/0735 (2013.01); Y02E 10/544 (2013.01); Y02P 70/50 (2015.11);
Abstract
Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.