Hsinchu, Taiwan

Hsiu-Han Liao

This inventor holds 30 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Memory Device Manufacturing. Top assignee: Winbond Electronics Corporation. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsiu-Han Liao. Retrieved from https://idiyas.com/inventor/hsiu-han-liao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 100.0


Average Co-Inventor Count = 2.8

ph-index = 2

Forward Citations = 45(Granted Patents)


Location History:

  • Hsinchu, TW (2009 - 2023)
  • Taichung, TW (2018 - 2024)

Company Filing History:


Years Active: 2009-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Flash Memory
Memory Device
Semiconductor Structure
Non-Volatile Memory
Resistive Memory
Integrated Circuit
Semiconductor Wafer
Manufacturing Method
Memory Fabrication
Test Key Structure
Multi-Level Operation
Resistive Random Access Memory
30 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hsiu-Han Liao

Introduction: Hsiu-Han Liao, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Hsiu-Han Liao holds several patents in the areas of semiconductor technology and renewable energy, showcasing his commitment to driving innovation forward.

Career Highlights: Throughout his illustrious career, Hsiu-Han Liao has worked with leading tech companies and research institutions, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Hsiu-Han Liao has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of creativity and excellence in all his endeavors.

Conclusion: Hsiu-Han Liao's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…