The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Apr. 03, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Sih-Han Chen, Huatan Township, Changhua County, TW;

Chien-Ting Chen, Tainan, TW;

Yao-Ting Tsai, Kaohsiung, TW;

Hsiu-Han Liao, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66515 (2013.01); H01L 21/28568 (2013.01); H01L 29/45 (2013.01); H01L 29/6653 (2013.01);
Abstract

A method for forming a self-aligned contact includes providing a substrate with a plurality of gate structures formed on the substrate. The method also includes forming a spacer liner on the gate structures and the substrate. The method also includes forming a sacrificial layer between the gate structures and on the gate structures. The method also includes forming a plurality of dielectric plugs through the sacrificial layer above the gate structures. The method also includes removing the sacrificial layer to form a plurality of contact openings between the gate structures. The method also includes forming an etch resistant layer conformally covering the sidewall and the bottom of the contact openings. The method also includes forming a plurality of contact plugs in the contact openings.


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