Hsien-Hsin Lin

This inventor holds 38 USPTO granted patents and 3 published patent applications and 3 EPO patents, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Mediatek Corporation, Aiwan Semiconductor Manufacturing Company, Ltd.. Active years: 2009-2026.

USPTO Granted Patents = 38 (Patent Applications = 3)

% Patents Active = 84.2

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 4.0

ph-index = 10

Forward Citations = 942(Granted Patents)

Location History:

Hisn-Chu, TW (2016)
Hsin-Chu, TW (2009 - 2023)

Company Filing History:

31 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

Aiwan Semiconductor Manufacturing Company, Ltd.

patents

4. 1 out of 1,391

National Taiwan University

patents

5. 1 out of 834,411

Other

patents

where one patent can have more than one assignee

Years Active: 2009-2026

Loading Chart...

Areas of Expertise:

Strained Source/Drain Structures

FinFET Fabrication

Thermal Management

Epitaxy Profile Engineering

Integrated Circuit Devices

Self-Aligned Contacts

Heat Dissipation Substrates

Silicon Layer

Dislocation Propagation

High Thermal Conductivity

Dual Epitaxial Process

Composite Strain Structure

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12581681 - Semiconductor device method for forming the same (2026-03-17),

2. 12408362 - Method of forming devices with strained source/drain structures (2025-09-02),

3. 12354882 - Semiconductor structure and method for forming the same (2025-07-08),

4. 12191226 - Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor device (2025-01-07),

5. 11587846 - Semiconductor device and method of forming the same (2023-02-21),

6. 11411098 - Devices with strained source/drain structures and method of forming the same (2022-08-09),

7. 10957589 - Self-aligned contact and method for forming the same (2021-03-23),

8. 10741469 - Thermal via arrangement for multi-channel semiconductor device (2020-08-11),

9. 9911826 - Devices with strained source/drain structures (2018-03-06),

10. 9842910 - Methods for manufacturing devices with source/drain structures (2017-12-12),

11. 9666691 - Epitaxy profile engineering for FinFETs (2017-05-30),

12. 9564509 - Method of fabricating an integrated circuit device (2017-02-07),

13. 9537004 - Source/drain formation and structure (2017-01-03),

14. 9515187 - Controlling the shape of source/drain regions in FinFETs (2016-12-06),

15. 9373695 - Method for improving selectivity of epi process (2016-06-21),

Title: Inventor Hsien-Hsin Lin

Introduction: Hsien-Hsin Lin is a renowned inventor hailing from Hsin-Chu, Taiwan. He has made significant contributions to the field of technology through his innovative creations.

Latest Patents: Lin holds several patents in the technology sector, focusing on advancements in semiconductor devices, integrated circuits, and computer architecture.

Career Highlights: With a background in electrical engineering, Lin has had a successful career working in both academia and industry. He has been involved in cutting-edge research projects that have pushed the boundaries of technological innovation.

Collaborations: Throughout his career, Lin has collaborated with leading tech companies and research institutions to further develop his inventions. His collaborative efforts have led to the creation of groundbreaking technologies that have shaped the industry.

Conclusion: Hsien-Hsin Lin's dedication to innovation and his passion for technology have solidified his reputation as a pioneering inventor in the field of electrical engineering. His work continues to inspire future generations of inventors and researchers.