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For the Inventor, By the Inventor

Hsin-Chu, Taiwan

Hsien-Hsin Lin

USPTO Granted Patents = 37 

 

Average Co-Inventor Count = 4.1

ph-index = 10

Forward Citations = 925(Granted Patents)


Location History:

  • Hisn-Chu, TW (2016)
  • Hsin-Chu, TW (2009 - 2023)

Company Filing History:

goldMedal31 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal5 out of 4,763 
 
Mediatek Corporation
 patents
bronzeMedal1 out of 1,712 
 
National Taiwan University
 patents
4. 1 out of 4 
 
Aiwan Semiconductor Manufacturing Company, Ltd.
 patents
5. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2009-2025

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37 patents (USPTO):Explore Patents
1. 12408362 - Method of forming devices with strained source/drain structures (2025-09-02),
2. 12354882 - Semiconductor structure and method for forming the same (2025-07-08),
3. 12191226 - Method of manufacturing heat dissipation substrate with high thermal conductivity for semiconductor device (2025-01-07),
4. 11587846 - Semiconductor device and method of forming the same (2023-02-21),
5. 11411098 - Devices with strained source/drain structures and method of forming the same (2022-08-09),
6. 10957589 - Self-aligned contact and method for forming the same (2021-03-23),
7. 10741469 - Thermal via arrangement for multi-channel semiconductor device (2020-08-11),
8. 9911826 - Devices with strained source/drain structures (2018-03-06),
9. 9842910 - Methods for manufacturing devices with source/drain structures (2017-12-12),
10. 9666691 - Epitaxy profile engineering for FinFETs (2017-05-30),
11. 9564509 - Method of fabricating an integrated circuit device (2017-02-07),
12. 9537004 - Source/drain formation and structure (2017-01-03),
13. 9515187 - Controlling the shape of source/drain regions in FinFETs (2016-12-06),
14. 9373695 - Method for improving selectivity of epi process (2016-06-21),
15. 9356150 - Method for incorporating impurity element in EPI silicon process (2016-05-31),

Title: Inventor Hsien-Hsin Lin

Introduction: Hsien-Hsin Lin is a renowned inventor hailing from Hsin-Chu, Taiwan. He has made significant contributions to the field of technology through his innovative creations.

Latest Patents: Lin holds several patents in the technology sector, focusing on advancements in semiconductor devices, integrated circuits, and computer architecture.

Career Highlights: With a background in electrical engineering, Lin has had a successful career working in both academia and industry. He has been involved in cutting-edge research projects that have pushed the boundaries of technological innovation.

Collaborations: Throughout his career, Lin has collaborated with leading tech companies and research institutions to further develop his inventions. His collaborative efforts have led to the creation of groundbreaking technologies that have shaped the industry.

Conclusion: Hsien-Hsin Lin's dedication to innovation and his passion for technology have solidified his reputation as a pioneering inventor in the field of electrical engineering. His work continues to inspire future generations of inventors and researchers.

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