The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2020

Filed:

Nov. 01, 2017
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Hsien-Hsin Lin, Hsinchu, TW;

Ming-Tzong Yang, Baoshan Township, Hsinchu County, TW;

Wen-Kai Wan, Hsinchu, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/528 (2013.01); H01L 23/535 (2013.01); H01L 27/0211 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01);
Abstract

The invention provides a semiconductor device. The semiconductor device includes a gate structure over fin structures arranged in parallel. Each of the fin structures has a drain portion and a source portion on opposite sides of the gate structure. A drain contact structure is positioned over the drain portions of the fin structures. A source contact structure is positioned over the source portions of the fin structures. A first amount of drain via structures is electrically connected to the drain contact structure. A second amount of source via structures is electrically connected to the source contact structure. The sum of the first amount and the second amount is greater than or equal to 2, and the sum of the first amount and the second amount is less than or equal to two times the amount of fin structures.


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