The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Jun. 26, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Kuan-Yu Chen, Taipei, TW;
Hsien-Hsin Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method, a gate structure is formed over a substrate, and source/drain (S/D) features are formed in the substrate and interposed by the gate structure. At least one of the S/D features is formed by forming a first semiconductor material including physically discontinuous portions, forming a second semiconductor material over the first semiconductor material, and forming a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from a composition of the first semiconductor material. The third semiconductor material has a composition different from the composition of the second semiconductor material.