The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Mar. 02, 2018
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Kuan-Yu Chen, Taipei, TW;
Hsien-Hsin Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a substrate and a gate structure over the substrate. The device further includes source/drain (S/D) features in the substrate. At least one of the S/D features is located in a trench. The at least one S/D feature includes a first semiconductor material covering an entirety of a bottom surface of the trench. The at least one S/D feature further includes a second semiconductor material over the first semiconductor material. The at least one S/D feature further includes a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions directly contacting the substrate. The second semiconductor material surrounds the third semiconductor material. In some embodiments, the physically discontinuous portions of the first semiconductor material include tip portions within tips of the trench.