The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Apr. 17, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Kuan-Yu Chen, Taipei, TW;
Hsien-Hsin Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a substrate, a gate structure over the substrate, and source/drain (S/D) features in the substrate and interposed by the gate structure. At least one of the S/D features includes a first semiconductor material, a second semiconductor material over the first semiconductor material, and a third semiconductor material over the second semiconductor material. The second semiconductor material has a composition different from the first semiconductor material and the third semiconductor material. The first semiconductor material includes physically discontinuous portions.