The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Dec. 24, 2020
Applicants:

Mediatek Inc., Hsinchu, TW;

Chee-wee Liu, Taipei, TW;

Inventors:

Ming-Tzong Yang, Hsinchu, TW;

Hsien-Hsin Lin, Hsinchu, TW;

Wen-Kai Wan, Hsinchu, TW;

Chia-Che Chung, Hsinchu, TW;

Chee-Wee Liu, Taipei, TW;

Assignees:

MEDIATEK INC., Hsinchu, TW;

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 23/373 (2013.01); H01L 21/768 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device includes a heat dissipation substrate and a device layer. The thermal conductivity of the heat dissipation substrate is greater than 200 WmKand the device layer is disposed on the heat dissipation substrate. The device layer includes a transistor. A method of forming a semiconductor device includes providing a base substrate, forming a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is greater than 200 WmK. The method further includes forming a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further includes removing the base substrate.


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