The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jan. 17, 2023
Applicants:
Mediatek Inc., Hsinchu, TW;
Chee-wee Liu, Taipei, TW;
Inventors:
Ming-Tzong Yang, Hsinchu, TW;
Hsien-Hsin Lin, Hsinchu, TW;
Wen-Kai Wan, Hsinchu, TW;
Chia-Che Chung, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Assignees:
MEDIATEK INC., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/373 (2013.01); H01L 21/768 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 WmKand 1200 WmK. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.