The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Sep. 10, 2012
Chien-chang Su, Kaohsiung, TW;
Tsz-mei Kwok, Hsin-Chu, TW;
Hsien-hsin Lin, Hsin-Chu, TW;
Hsueh-chang Sung, Zhubei, TW;
Yi-fang Pai, Hsin-Chu, TW;
Kuan-yu Chen, Taipei, TW;
Chien-Chang Su, Kaohsiung, TW;
Tsz-Mei Kwok, Hsin-Chu, TW;
Hsien-Hsin Lin, Hsin-Chu, TW;
Hsueh-Chang Sung, Zhubei, TW;
Yi-Fang Pai, Hsin-Chu, TW;
Kuan-Yu Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin.