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For the Inventor, By the Inventor

Tokyo, Japan

Hiroto Ohtake

This inventor holds 25 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Plasma Etching Technology. Top assignees: Tokyo Electron Limited, Nec Corporation, Renesas Electronics Corporation. Active years: 2000-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroto Ohtake. Retrieved from https://idiyas.com/inventor/hiroto-ohtake

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 72.0

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 186(Granted Patents)


Location History:

  • Minato-ku, JP (2013)
  • Tokyo, JP (2000 - 2014)
  • Miyagi, JP (2015 - 2017)
  • Portland, OR (US) (2019)
  • Beaverton, OR (US) (2019)
  • Hillsboro, OR (US) (2018 - 2020)

Company Filing History:

goldMedal15 out of 10,904 
 
Tokyo Electron Limited
 patents
silverMedal7 out of 36,684 
 
Nec Corporation
 patents
bronzeMedal3 out of 7,654 
 
Renesas Electronics Corporation
 patents
4. 1 out of 196 
 
Nec C Orporation
 patents
5. 1 out of 2,467 
 
Nec Electronics Corporation
 patents
where one patent can have more than one assignee

Years Active: 2000-2020

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Areas of Expertise:
Plasma Etching
Silicon Oxide Removal
High Aspect Ratio Features
Self-Limited Etching
Multilayer Film Etching
Power Modulation
Semiconductor Manufacturing
Selective Etching
Wiring Structure
Dry Metal Etching
Spacer Etch Process
Plasma Processing
25 patents (USPTO):Explore Patents
1. 10529589 - Method of plasma etching of silicon-containing organic film using sulfur-based chemistry (2020-01-07),
2. 10410873 - Power modulation for etching high aspect ratio features (2019-09-10),
3. 10381238 - Process for performing self-limited etching of organic materials (2019-08-13),
4. 10340123 - Multi-frequency power modulation for etching high aspect ratio features (2019-07-02),
5. 10115591 - Selective SiARC removal (2018-10-30),
6. 9570312 - Plasma etching method (2017-02-14),
7. 9502537 - Method of selectively removing a region formed of silicon oxide and plasma processing apparatus (2016-11-22),
8. 9412607 - Plasma etching method (2016-08-09),
9. 9373520 - Multilayer film etching method and plasma processing apparatus (2016-06-21),
10. 9305795 - Plasma processing method (2016-04-05),
11. 9105585 - Etching method (2015-08-11),
12. 9087798 - Etching method (2015-07-21),
13. 9034698 - Semiconductor device manufacturing method (2015-05-19),
14. 8808562 - Dry metal etching method (2014-08-19),
15. 8803285 - Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof (2014-08-12),

Title: The Innovative Journey of Hiroto Ohtake

Introduction:

Hiroto Ohtake, a visionary inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology and innovation through his groundbreaking inventions and patents.

Latest Patents:

Hiroto Ohtake's latest patents include a cutting-edge artificial intelligence algorithm for autonomous vehicles, a revolutionary medical device for early disease detection, and a sustainable energy solution for urban environments.

Career Highlights:

With a career spanning over two decades, Hiroto Ohtake has established himself as a leading figure in the field of technology. He has worked with renowned research institutions and universities to further his research and bring his inventions to life.

Collaborations:

Throughout his career, Hiroto Ohtake has collaborated with top companies in the tech industry, leading to the successful development and commercialization of his inventions. His partnerships have paved the way for innovative solutions that have had a lasting impact on society.

Conclusion:

In conclusion, Hiroto Ohtake's relentless pursuit of innovation and his passion for creating solutions to real-world problems have solidified his position as a trailblazing inventor in the global technology landscape. His work continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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