The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Sep. 02, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tomiko Kamada, Miyagi, JP;
Hiroto Ohtake, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32192 (2013.01); H01L 21/31116 (2013.01); H01L 29/66545 (2013.01);
Abstract
A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/mor more to about 400 W/mor less.