The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jun. 01, 2018
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Erdinc Karakas, Hillsboro, OR (US);
Li Wang, Hillsboro, OR (US);
Andrew Nolan, Albany, NY (US);
Christopher Talone, Albany, NY (US);
Shyam Sridhar, Albany, NY (US);
Alok Ranjan, Austin, TX (US);
Hiroto Ohtake, Hillsboro, OR (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SFand an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.