The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Aug. 11, 2014
Tokyo Electron Limited, Tokyo, JP;
Hiroto Ohtake, Miyagi, JP;
Akinori Kitamura, Miyagi, JP;
Hironori Matsuoka, Miyagi, JP;
Yoko Noto, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. In the etching method, a gate material deposited between multiple fins is etched by using surface wave plasma. A pressure in the etching method is 50 mTorr (6.67 Pa) or more, a frequency of a power to be applied to a mounting table configured to mount thereon the target object is in a range of 10 Hz or more to 200 Hz or less, and the power is pulse-modulated such that a duty ratio as a ratio of an ON-time to a pulse cycle is 50% or less.