The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
May. 08, 2007
Applicants:
Hiroto Ohtake, Tokyo, JP;
Naoya Inoue, Tokyo, JP;
Ippei Kume, Tokyo, JP;
Takeshi Toda, Kanagawa, JP;
Yoshihiro Hayashi, Tokyo, JP;
Inventors:
Hiroto Ohtake, Tokyo, JP;
Naoya Inoue, Tokyo, JP;
Ippei Kume, Tokyo, JP;
Takeshi Toda, Kanagawa, JP;
Yoshihiro Hayashi, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The semiconductor device has, as the capacitive structure, a thin-film capacitor having a lower electrode structure composed of an amorphous or microcrystalline film or a laminate of these films formed on a polycrystalline film.