The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2019

Filed:

May. 24, 2017
Applicant:

Tokyo Electron Limited, Minato-ku, Tokyo, JP;

Inventor:

Hiroto Ohtake, Hillsboro, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H05H 1/46 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/32082 (2013.01); H01L 21/311 (2013.01); H01L 21/67063 (2013.01); H05H 1/46 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process includes a power modulation cycle composed of applying a first power modulation sequence to the plasma processing system, and applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence.


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