The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Aug. 27, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akinori Kitamura, Miyagi, JP;

Hiroto Ohtake, Miyagi, JP;

Eiji Suzuki, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01J 37/32 (2006.01); H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01J 37/32192 (2013.01); H01J 37/32238 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01J 37/32862 (2013.01); H01J 37/32926 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01);
Abstract

Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.


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