The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Sep. 12, 2011
Yusuke Ohsawa, Albany, NY (US);
Hiroto Ohtake, Tokyo, JP;
Eiji Suzuki, Tokyo, JP;
Kaushik Arun Kumar, Poughkeepsie, NY (US);
Andrew W. Metz, Loundonville, NY (US);
Yusuke Ohsawa, Albany, NY (US);
Hiroto Ohtake, Tokyo, JP;
Eiji Suzuki, Tokyo, JP;
Kaushik Arun Kumar, Poughkeepsie, NY (US);
Andrew W. Metz, Loundonville, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CHR(wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer.