The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
May. 29, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Ryohei Takeda, Miyagi, JP;
Mitsuhiro Tomura, Miyagi, JP;
Akinori Kitamura, Miyagi, JP;
Shinji Higashitsutsumi, Miyagi, JP;
Hiroto Ohtake, Miyagi, JP;
Takashi Tsukamoto, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 37/32192 (2013.01); H01L 21/02115 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01);
Abstract
Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage () to 100° C. or greater.