Miyagi, Japan

Shinji Higashitsutsumi

This inventor holds 2 USPTO granted patents. Top assignee: Tokyo Electron Limited. Active years: 2017-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinji Higashitsutsumi. Retrieved from https://idiyas.com/inventor/shinji-higashitsutsumi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2017-2022

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2 patents (USPTO):Explore Patents

Title: Shinji Higashitsutsumi: Plasma Processing and Etching Innovations.

Introduction

Shinji Higashitsutsumi is an inventor based in Miyagi, Japan, associated with Tokyo Electron Limited. His work focuses on plasma processing methods and equipment used in semiconductor manufacturing. He is credited with 2 patents.

Latest Patents

“Plasma Processing Method and Plasma Processing Apparatus” describes a process that uses hydrogen-containing plasma to process a substrate inside a chamber. After substrate processing, oxygen-containing plasma treats component surfaces within the chamber, and substrate processing is then performed again. This sequence addresses both substrate treatment and the condition of chamber components.

“Plasma Etching Method” presents a technique for forming masks used in multilayer-film etching. It etches boron-doped amorphous carbon using plasma generated from a mixture of chlorine and oxygen gases, while maintaining the mounting-stage temperature at 100°C or higher.

Career Highlights

Higashitsutsumi’s listed inventions address distinct stages of semiconductor fabrication: plasma-based substrate processing and the preparation of masks for multilayer etching. Both patents are associated with Tokyo Electron Limited.

Collaborations

His listed coworkers include Hiroto Ohtake and Takashi Tsukamoto.

Conclusion

Shinji Higashitsutsumi’s patent work reflects a focus on practical plasma techniques for semiconductor processing, including chamber treatment and mask formation for multilayer etching.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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