The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Apr. 16, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/31105 (2013.01); H01J 2237/3346 (2013.01);
Abstract
An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes (a) processing the target object with plasma of a first processing gas containing fluorocarbon and fluorohydrocarbon by generating the plasma of the first processing gas with a microwave, and (b) after the processing of the target object with the plasma of the first processing gas, processing the target object with plasma of a second processing gas containing fluorocarbon by generating the plasma of the second processing gas with the microwave.