Hidemitsu Sakamoto

Title: Hidemitsu Sakamoto: Innovator in SiC Single Crystal Production

Introduction

Hidemitsu Sakamoto is a prominent inventor based in Susono, Japan. He has made significant contributions to the field of materials science, particularly in the production of silicon carbide (SiC) single crystals. With a total of 15 patents to his name, Sakamoto's work has advanced the technology used in various industrial applications.

Latest Patents

Sakamoto's latest patents include an apparatus for producing SiC single crystals and a method for producing SiC single crystals. The apparatus is designed for solution growth and features a seed shaft and a crucible. The seed shaft has a lower end surface where an SiC seed crystal is attached, while the crucible holds an SiC solution. This innovative design allows for more stable temperature control during the crystal growth process. The production method involves a solution growth process that includes multiple contact steps and a growth step, ensuring efficient growth of the SiC single crystal.

Career Highlights

Throughout his career, Sakamoto has worked with notable companies such as Toyota Motor Corporation and Nippon Steel & Sumitomo Metal Corporation. His experience in these leading organizations has contributed to his expertise in the field of materials science and crystal production.

Collaborations

Sakamoto has collaborated with several professionals in his field, including Kazuhiko Kusunoki and Hironori Daikoku. These collaborations have further enriched his research and development efforts.

Conclusion

Hidemitsu Sakamoto's innovative work in the production of SiC single crystals has made a significant impact on the industry. His patents and collaborations reflect his dedication to advancing materials science and technology.