The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2017

Filed:

Dec. 26, 2011
Applicants:

Nobuhiro Okada, Tokyo, JP;

Kazuhito Kamei, Tokyo, JP;

Kazuhiko Kusunoki, Tokyo, JP;

Nobuyoshi Yashiro, Tokyo, JP;

Kouji Moriguchi, Tokyo, JP;

Hironori Daikoku, Susono, JP;

Hiroshi Suzuki, Gotenba, JP;

Tomokazu Ishii, Susono, JP;

Hidemitsu Sakamoto, Susono, JP;

Motohisa Kado, Susono, JP;

Yoichiro Kawai, Okazaki, JP;

Inventors:

Nobuhiro Okada, Tokyo, JP;

Kazuhito Kamei, Tokyo, JP;

Kazuhiko Kusunoki, Tokyo, JP;

Nobuyoshi Yashiro, Tokyo, JP;

Kouji Moriguchi, Tokyo, JP;

Hironori Daikoku, Susono, JP;

Hiroshi Suzuki, Gotenba, JP;

Tomokazu Ishii, Susono, JP;

Hidemitsu Sakamoto, Susono, JP;

Motohisa Kado, Susono, JP;

Yoichiro Kawai, Okazaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 29/36 (2006.01); C30B 15/14 (2006.01); C30B 17/00 (2006.01); C30B 15/30 (2006.01);
U.S. Cl.
CPC ...
C30B 15/20 (2013.01); C30B 15/14 (2013.01); C30B 15/30 (2013.01); C30B 17/00 (2013.01); C30B 29/36 (2013.01); C30B 15/305 (2013.01); Y10T 117/1068 (2015.01);
Abstract

An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius:(1−)×2/>1.5  (1) where, D1 is defined by Formula (2) and D2 by Formula (3):1=503292×(1/())  (2)2=503292×(1/())  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.


Find Patent Forward Citations

Loading…