Tokyo, Japan

Kouji Moriguchi


 

Average Co-Inventor Count = 8.6

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: Kouji Moriguchi: Innovator in SiC Single Crystal Manufacturing

Introduction

Kouji Moriguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the production of silicon carbide (SiC) single crystals. With a total of 2 patents, his work has advanced the technology used in various applications.

Latest Patents

Moriguchi's latest patents include a manufacturing apparatus for SiC single crystals and a method for manufacturing N-type SiC single crystals using a mixed gas atmosphere. The manufacturing apparatus features an induction heating control unit that optimizes the heating process based on specific formulas related to electromagnetic wave penetration. This innovation enhances the efficiency of producing high-quality SiC crystals. The method for manufacturing N-type SiC single crystals focuses on reducing nitrogen concentration variation among multiple ingots, ensuring uniformity in the final product.

Career Highlights

Throughout his career, Kouji Moriguchi has worked with notable companies such as Nippon Steel & Sumitomo Metal Corporation and Toyota Motor Corporation. His experience in these leading organizations has equipped him with the knowledge and skills necessary to innovate in the semiconductor industry.

Collaborations

Moriguchi has collaborated with esteemed colleagues, including Nobuhiro Okada and Kazuhito Kamei. Their combined expertise has contributed to the successful development of advanced manufacturing techniques in the field.

Conclusion

Kouji Moriguchi's contributions to the manufacturing of SiC single crystals have positioned him as a key figure in semiconductor innovation. His patents and career achievements reflect his dedication to advancing technology in this critical area.

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