Tokyo, Japan

Kazuhito Kamei

This inventor holds 27 USPTO granted patents and 11 published patent applications, plus 2 CIPO patents and 10 EPO patents, primarily in Silicon Carbide Production. Top assignees: Toyota Jidosha Kabushiki Kaisha, Nippon Steel Sumitomo Metal Corporation, Sony Corporation. Active years: 2003-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhito Kamei. Retrieved from https://idiyas.com/inventor/kazuhito-kamei

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 48.1


 

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 69(Granted Patents)


Location History:

  • Hyogo, JP (2003 - 2016)
  • Chiyoda-ku, JP (2017)
  • Osaka, JP (2018)
  • Kimitsu, JP (2018)
  • Kitakyushu, JP (2018)
  • Tokyo, JP (2016 - 2019)

Company Filing History:


Years Active: 2003-2019

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Areas of Expertise:
SiC Single Crystal
Silicon Carbide
Production Method
Crucible
Solution Growth
Manufacturing Apparatus
N-Type SiC
Graphite Powders
Negative Electrode Material
Ingot
Wafer
Film
27 patents (USPTO):Explore Patents

Title: Kazuhito Kamei: Innovator in SiC Single Crystal Technology

Introduction

Kazuhito Kamei, based in Tokyo, Japan, is a prolific inventor with a remarkable portfolio of 27 patents. His expertise primarily lies in the development and production of silicon carbide (SiC) single crystals, which are crucial for various advanced semiconductor applications. Kamei's innovative work has significantly contributed to the field of materials science and engineering.

Latest Patents

Among Kamei's latest patents is one that focuses on SiC single crystals and their production methods. This patent describes a SiC single crystal characterized by a substantial growth thickness that is free from inclusions. It specifies a growth process where the ratio of the total length of the outer peripheral section formed by the {1-100} faces compared to the length of the outer periphery of the growth surface adheres to a significant relationship (M/P ≤ 0.70), with a growth length of 2 mm or more. Additionally, he has developed a method to produce SiC single crystals that minimizes the creation of SiC polycrystals, using a solution growth method that involves specific steps such as power-output increase and crystal growth.

Career Highlights

Kamei's career features substantial tenures at two major companies: Toyota Motor Corporation, where he contributed to automotive innovations, and Nippon Steel & Sumitomo Metal Corporation, where he played a vital role in advancing materials technology. His experience in these industry-leading firms has provided him with the knowledge and environment necessary to foster innovation.

Collaborations

Kazuhito Kamei has collaborated with notable experts, including Kazuhiko Kusunoki and Hironori Daikoku. These collaborations have allowed the pooling of intellect and resources, leading to significant advancements in SiC technology and further enhancing the efficacy of his inventions.

Conclusion

With a wealth of experience and a series of impactful patents, Kazuhito Kamei continues to be a driving force in the realm of semiconductor materials. His contributions not only advance technological capabilities but also pave the way for future innovations in the field. As he continues to push the boundaries of materials science, Kamei’s work remains crucial for the development of advanced semiconductor technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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