The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Aug. 27, 2014
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;
Hironori Daikoku, Susono, JP;
Motohisa Kado, Gotenba, JP;
Kazuhito Kamei, Tokyo, JP;
Kazuhiko Kusunoki, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≤0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.