The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Mar. 17, 2016
Toyota Jidosha Kabushiki Kaisha, Aichi, JP;
Kazuaki Seki, Futtsu, JP;
Kazuhito Kamei, Osaka, JP;
Kazuhiko Kusunoki, Nishinomiya, JP;
Katsunori Danno, Susono, JP;
Hironori Daikoku, Susono, JP;
Masayoshi Doi, Nagoya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi, JP;
Abstract
A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of Si—C solution contained in a crucible is melted, and a Si—C solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the Si—C solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the Si—C solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.