The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jun. 11, 2012
Applicants:

Kazuhito Kamei, Tokyo, JP;

Kazuhiko Kusunoki, Tokyo, JP;

Nobuyoshi Yashiro, Tokyo, JP;

Nobuhiro Okada, Tokyo, JP;

Hironori Daikoku, Susono, JP;

Motohisa Kado, Susono, JP;

Hidemitsu Sakamoto, Susono, JP;

Inventors:

Kazuhito Kamei, Tokyo, JP;

Kazuhiko Kusunoki, Tokyo, JP;

Nobuyoshi Yashiro, Tokyo, JP;

Nobuhiro Okada, Tokyo, JP;

Hironori Daikoku, Susono, JP;

Motohisa Kado, Susono, JP;

Hidemitsu Sakamoto, Susono, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/10 (2006.01); C30B 35/00 (2006.01); C30B 19/02 (2006.01); C30B 29/36 (2006.01); C30B 17/00 (2006.01); C30B 19/08 (2006.01);
U.S. Cl.
CPC ...
C30B 15/10 (2013.01); C30B 17/00 (2013.01); C30B 19/02 (2013.01); C30B 19/08 (2013.01); C30B 29/36 (2013.01); C30B 35/00 (2013.01); Y10T 117/1032 (2015.01);
Abstract

A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.


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