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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9896778 B1

PDFFull Text
Expired
Date of Patent:
Feb. 20, 2018

Filed:

May. 19, 2014

Apparatus for producing sic single crystals and method of producing sic single crystals using said production apparatus

Applicants:

Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;

Toyota Jidosha Kabushiki Kaisha, Aichi, JP;

Inventors:

Kazuhito Kamei, Kitakyushu, JP;

Kazuhiko Kusunoki, Nishinomiya, JP;

Motohisa Kado, Gotenba, JP;

Hironori Daikoku, Susono, JP;

Hidemitsu Sakamoto, Susono, JP;

Assignee:

TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi, JP;

Attorney:

Clark & Brody

Primary Examiner:

Duy Deo

Assistant Examiner:

Erin Bergner

Int. Cl.
CPC ...
C30B 17/00 (2006.01); C30B 29/36 (2006.01); C30B 15/00 (2006.01);
U.S. Cl.
CPC ...
C30B 17/00 (2013.01); C30B 15/00 (2013.01); C30B 29/36 (2013.01);
Abstract

An apparatus for producing SiC single crystals where the quality of the SiC single crystals is improved, and a production method using such an apparatus are provided. The apparatus for producing SiC single crystals according to an embodiment of the present invention is employed to produce an SiC single crystal by the solution growth method. The production apparatus includes a crucible and a support shaft. The crucible accommodates an Si—C solution. The support shaft supports the crucible. The support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible. The heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion and (b) a space adjacent to at least a portion of the contact portion or the bottom portion.

Find Patent Forward Citations

Kamei, Kazuhito. (2018). Apparatus for producing sic single crystals and method of producing sic single crystals using said production apparatus (U.S. Patent No. 9896778). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9896778

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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