The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
May. 03, 2016
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;
Hironori Daikoku, Susono, JP;
Kazuhito Kamei, Tokyo, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Kazuaki Seki, Tokyo, JP;
Yutaka Kishida, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
Abstract
A method for producing a SiC single crystal by a solution process is provided, which allows generation of miscellaneous crystals to be reduced. Method for producing a SiC single crystal wherein a crucible has thickness Lu in horizontal direction at same height as liquid level of Si—C solution, and thickness Ld in horizontal direction at same height as bottom inner wall, Ld/Lu is 2.00 to 4.21, and thickness in horizontal direction of crucible monotonously increases between Lu and Ld from Lu toward Ld, wall thickness of crucible is 1 mm or greater, bottom thickness Lb in vertical direction of crucible is between 1 mm and 15 mm, bottom outer wall of crucible has flat section with area of 100 mmor greater, depth of Si—C solution from bottom inner wall is 30 mm or greater, and method includes heating and electromagnetic stirring Si—C solution with high-frequency coil.