The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Jul. 10, 2013
Toyota Jidosha Kabushiki Kaisha, Aichi, JP;
Nobuhiro Okada, Kisarazu, JP;
Kazuhito Kamei, Kimitsu, JP;
Kazuhiko Kusunoki, Nishinomiya, JP;
Nobuyoshi Yashiro, Itami, JP;
Koji Moriguchi, Nishinomiya, JP;
Hironori Daikoku, Susono, JP;
Motohisa Kado, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi, JP;
Abstract
An apparatus () for producing an SiC single crystal is used in the solution growth includes a seed shaft () and a crucible (). The seed shaft () has a lower end surface (S) to which an SiC seed crystal () is to be attached. The crucible () holds an Si—C solution (). The seed shaft () includes a cylinder part (A), a bottom part (B), and a low heat conductive member (C). The bottom part (B) is located at the lower end of the cylinder part (A) and has the lower end surface (S). The low heat conductive member (C) is arranged on the upper surface of the bottom part (B) and has a thermal conductivity lower than that of the bottom part (B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.