The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2017
Filed:
Jun. 15, 2012
Kazuhiko Kusunoki, Tokyo, JP;
Kazuhito Kamei, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Hironori Daikoku, Susono, JP;
Motohisa Kado, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Kazuhito Kamei, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Hironori Daikoku, Susono, JP;
Motohisa Kado, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATION, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi, JP;
Abstract
An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal () would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.