The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Nov. 11, 2013
Hironori Daikoku, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Motohisa Kado, Gotenba, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Hironori Daikoku, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Motohisa Kado, Gotenba, JP;
Kazuhiko Kusunoki, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.