The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Dec. 15, 2011
Tomokazu Ishii, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Kazuhiko Kusunoki, Amagasaki, JP;
Kazuhito Kamei, Hyogo, JP;
Tomokazu Ishii, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Kazuhiko Kusunoki, Amagasaki, JP;
Kazuhito Kamei, Hyogo, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.