Toyota Jidosha Kabushiki Kaisha

Nippon Steel Sumitomo Metal Corporation

Nippon Steel & Sumitomo Metal Corporatin

Hidemitsu Sakamoto

Hiroshi Suzuki

Kazuhiko Kusunoki

Hironori Daikoku

Kazuhito Kamei

Motohisa Kado

Nobuhiro Okada

Nobuyoshi Yashiro

Yasuyuki Fujiwara

Koji Moriguchi

Tomokazu Ishii

Yukio Terashima

Kouji Moriguchi

Yoichiro Kawai

An apparatus () for producing an SiC single crystal is used in the solution growth includes a seed shaft () and a crucible (). The seed shaft () has a lower end surface (S) to which an SiC seed crystal () is to be attached. The crucible () holds an Si&#x2014;C solution (). The seed shaft () includes a cylinder part (A), a bottom part (B), and a low heat conductive member (C). The bottom part (B) is located at the lower end of the cylinder part (A) and has the lower end surface (S). The low heat conductive member (C) is arranged on the upper surface of the bottom part (B) and has a thermal conductivity lower than that of the bottom part (B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

Apparatus for producing SiC single crystal and method for producing SiC single crystal

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si&#x2014;C solution. In the contact step B, a contact region between the principal surface and the stored Si&#x2014;C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si&#x2014;C solution.

Production method of SiC single crystal

An apparatus for producing SiC single crystals where the quality of the SiC single crystals is improved, and a production method using such an apparatus are provided. The apparatus for producing SiC single crystals according to an embodiment of the present invention is employed to produce an SiC single crystal by the solution growth method. The production apparatus includes a crucible and a support shaft. The crucible accommodates an Si&#x2014;C solution. The support shaft supports the crucible. The support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible. The heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion and (b) a space adjacent to at least a portion of the contact portion or the bottom portion.

Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus

A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si&#x2014;C solution and a seed shaft having a lower end surface where an SiC seed crystal () would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

Production apparatus and production method of SiC single crystal

The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.

Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution

A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius:(1&#x2212;)&#xd7;2/&#x3e;1.5&#x2003;&#x2003;(1) where, D1 is defined by Formula (2) and D2 by Formula (3):1=503292&#xd7;(1/())&#x2003;&#x2003;(2)2=503292&#xd7;(1/())&#x2003;&#x2003;(3); &#x3c3;c is electric conductivity (S/m) of the sidewall, &#x3c3;s is electric conductivity (S/m) of the SiC solution; &#x3bc;c is relative permeability of the sidewall, and &#x3bc;s is relative permeability of the SIC solution.

Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal

Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.

SiC single crystal ingot and production method therefor

A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig () and a crucible () are accommodated in a chamber (). A SiC solution () is housed in the crucible (). The jig () includes a seed shaft () and a cover member (). The seed shaft () can move up and down, and a SiC seed crystal () is attached to the lower surface thereof. The cover member () is attached to the lower end portion of the seed shaft (). The cover member () is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft () is disposed in the cover member ().

Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal

To suppress 3D or convex growth and ensure a high flatness, an apparatus for producing an SiC single crystal includes: a container which holds an SiC solution, a portion for maintaining the solution in the container at a suitable temperature, a shaft having a lower end part acting as a portion for holding an SiC seed crystal in planar contact with an overall back surface of a crystal growth face and acting as a portion for cooling the SiC seed crystal, and a portion of the holding shaft for enabling an SiC single crystal to continuously grow at the crystal growth face by maintaining the crystal growth face brought into contact with the solution, a lower end part of the shaft having a portion for obtaining a uniform in-plane temperature distribution of the crystal growth face brought into planar contact, and a method for the same.

Apparatus and method for production of SiC single crystal

In a method of producing a SiC single crystal, the SiC single crystal is grown on a SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.

Method of producing SiC single crystal

A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.

Seed crystal axis for solution growth of single crystal

Silicon raw material is filled into a graphite crucible (), the graphite crucible () is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal () held immediately below the surface of the molten liquid.

Method of manufacturing a silicon carbide single crystal

A method for producing a silicon carbide single crystal, which comprises bringing a silicon carbide single crystal substrate into contact with a melt prepared by melting a raw material containing Si and C, and growing a silicon carbide single crystal on the substrate, the method including performing a cycle comprising the following steps (a) and (b):

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Susono, Japan

Hidemitsu Sakamoto