The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Mar. 11, 2010
Hidemitsu Sakamoto, Susono, JP;
Hironori Daikoku, Susono, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
In a method of producing a SiC single crystal, the SiC single crystal is grown on a SiC seed crystal by bringing the SiC seed crystal, which is fixed at a rotatable seed crystal fixing shaft, into contact with a solution produced by dissolving carbon in melt containing silicon in a rotatable crucible. The method includes starting rotation of the seed crystal fixing shaft, and starting rotation of the crucible after a predetermined delay time (Td); then stopping the rotation of the seed crystal fixing shaft and the rotation of the crucible simultaneously; then stopping the seed crystal fixing shaft and the crucible for a predetermined stop time (Ts); and repeating a rotation/stop cycle.