The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
May. 08, 2013
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Nippon Steel & Sumitomo Metal Corporation, Tokyo, JP;
Motohisa Kado, Susono, JP;
Hironori Daikoku, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
NIPPON STEEL & SUMITOMO METAL CORPORATIN, Tokyo, JP;
Abstract
Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, the growth crystal having a recessed crystal growth surface and not including inclusions.