The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 26, 2011
Kazuhito Kamei, Tokyo, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Motohisa Kado, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Hironori Daikoku, Susono, JP;
Kazuhito Kamei, Tokyo, JP;
Kazuhiko Kusunoki, Tokyo, JP;
Nobuyoshi Yashiro, Tokyo, JP;
Nobuhiro Okada, Tokyo, JP;
Motohisa Kado, Susono, JP;
Hidemitsu Sakamoto, Susono, JP;
Hironori Daikoku, Susono, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi-ken, JP;
Abstract
A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig () and a crucible () are accommodated in a chamber (). A SiC solution () is housed in the crucible (). The jig () includes a seed shaft () and a cover member (). The seed shaft () can move up and down, and a SiC seed crystal () is attached to the lower surface thereof. The cover member () is attached to the lower end portion of the seed shaft (). The cover member () is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft () is disposed in the cover member ().